Infineon is processing SiC on 300-mm wafers for the first time.
Infineon has for the first time produced functional SiC power components on 300-millimeter wafers. The larger wafer diameter is intended to make production more efficient and, in the long term, improve supply for applications such as electric vehicles and charging infrastructure.
300-mm SiC wafers allow for 2.3 times more chips than 200-mm wafers.
Image: Infineon
The semiconductor manufacturer processed the 300-millimeter silicon carbide wafers under actual production conditions at its facility in Villach, Austria. According to the company, Infineon is now the first firm to achieve this milestone in semiconductor manufacturing. Existing production equipment that can also be used for silicon was employed in this process.
The main advantage of larger wafers lies in yield: According to Infineon, a 300-millimeter wafer allows for roughly 2.3 times as many chips as a 200-millimeter wafer. This makes it possible to scale production more efficiently in the long term. However, Infineon has not yet specified a concrete date for starting production. The company plans to determine this date together with customers and partners. Meanwhile, the existing roadmap for 200-millimeter SiC production will continue to be implemented.
Silicon carbide is currently one of the most important wide-bandgap materials for power electronics. Compared to conventional silicon, SiC enables lower power losses, higher power densities, and efficient operation at high voltages and temperatures. Applications include traction inverters, on-board chargers, and charging stations for electric vehicles, as well as stationary storage systems and industrial drives.
SiC Remains Important for Electric Mobility and Charging Infrastructure
For electric mobility, this development is particularly significant in terms of scalability and manufacturing costs. Larger wafers allow more SiC chips to be produced per manufacturing cycle, thereby facilitating cost-effective production of larger quantities in the long term. However, Infineon does not provide specific figures regarding potential cost reductions for individual components.
Meanwhile, the company is also working on more efficient production of SiC wafers themselves. At its Dresden facility, Infineon has successfully tested the so-called Cold-Split technology for 300-millimeter SiC wafers. This method allows wafers to be separated from a SiC crystal with less material loss and shorter processing time compared to traditional wire sawing, enabling more wafers to be obtained from the same crystal.
This SiC milestone builds on Infineon’s 300-millimeter strategy in Villach. There, the company had already prepared the transition from 200-millimeter to 300-millimeter wafers for gallium nitride and announced at the end of October that it would invest around 1.1 billion euros in the facility by 2034. Mass production of GaN power semiconductors on 300-millimeter wafers is set to begin by the end of 2027.
With SiC, Infineon is now applying this manufacturing approach to a second wide-bandgap material. The company produces power semiconductors based on silicon, gallium nitride, and silicon carbide, using 300-millimeter technology for all three materials.